• nvSRAM™ Architecture
• Process Technology
• Features and Benefits
• Applications
• White Papers
• Awards

nvSram™ Architecture

The nvSRAM architecture yields a combination of features unmatched in the memory business.

• 15ns to 45ns parallel read/write speed
• Reliable non-volatile storage without battery problems
• Unlimited read, write and recall cycles
• 200,000 to 1,000,000 store cycles to nonvolatile elements on power-down or under user control
• Directly replaces SRAM, battery-backed SRAM, EPROM or EEPROM (commercial, industrial)
• SRAM pin-outs and timings
• 20...100-year data retention
• Power-down AutoStore™ cycles performed only after data changes
• Automatic recall on power-up
• Automatic write protect below Vswitch
• 5V or 3/3.3V power supplies
• Available in surface mount and DIP packages
• Products meet all of the RoHS requirements
• 100% matte Tin plating

nvSRAM Benefits

MORE RELIABLE AND HIGHER PERFORMANCE THAN EEPROM

• Eliminates EEPROM write limitations
• Symmetrical read/write accesses to 15ns
• Can store full array on power-down
• Zero system time for AutoStore™

REPLACES BATTERY-BACKED SRAMS

• No batteries or contacts to fail
• No battery disposal headaches or regulations
• No data loss from electrical noise or undershoot
• Not sensitive to power on/off ramp rates
• Faster read/write capability
• Pin compatible with standard batRAMs
• Surface mount packages
• No socketing or “snap on” assembly steps
• Solders directly onto PC board
• No power monitoring required

SUPPLEMENTS OR REPLACES FLASH

• Easy and fast data storage
• No block management or sector erase required
• All program and data changes saved in a single STORE cycle under user control or on power-down
• Program, data storage and SRAM all in one package